Part # 2N2102 datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: pitaxial planar NPN

Part Details:

® 2N2102 EPITAXIAL PLANAR NPN s GENERAL PURPOSE AMPLIFIER ANDSWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V VCEO Collector-Emitter Voltage (IB = 0) 65 V VCER Collector-Emitter Voltage (RBE 10) 80 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A Ptot Total Dissipation at Tamb 25 oC 1 W at TC 25 oC 5 W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC December 2002 1/4 2N2102 THERMAL DATA R o

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2N2102.pdf Datasheet