Part # IRF510A datasheet

Part Manufacturer: Motorola


Part Description: RF510A Advanced Power MOSF

Part Details:

Advanced Power MOSFET IRF510A FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Chargen Extended Safe Operating Arean TO-220 175°C Operating Temperature n Lower Leakage Current : 10 A (Max.) @ VDS = 100Vn Lower RDS(ON) : 0.289 (Typ.) 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage DSS 100 V Continuous Drain Current (TC=25) 5.6 ID A Continuous Drain Current (TC=100) 4 IDM Drain Current-Pulsed (1) 20 A VGS Gate-to-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (2) 63 mJ IAR Avalanche Current (1) 5.6 A EAR Repetitive Avalanche Energy (1) 3.3 mJ dv/dt Peak Diode Recovery dv/dt (2) 6.5

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IRF510A.pdf Datasheet