Part # FDP5N50 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDP5N50_FDPF5N50 Final

Part Details:

FDP5N50 / FDPF5N50 December 2007UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4 Features Description · RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar N-Channel MOSFET · Low gate charge ( Typ. 11nC) stripe, DMOS technology. · Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche · 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power · Improved dv/dt capability factor correction. · RoHS compliant D G TO-220 TO-220F G D S G D S FDP Series FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP5N50 FDPF5N50 Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V -Continuous (T I C = 25oC) 5 5* D Drain Current A -Continuous (TC = 100oC)

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FDP5N50.pdf Datasheet