Part # HUFA75307T3ST datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HUFA75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSF

Part Details:

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET · 2.6A , 55V This N-Channel power MOSFET is · Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative UltraFET® process. This advanced · Diode Exhibits Both High Speed and Soft Recovery process technology achieves the · Temperature Compensating PSPICE® Model lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of · Thermal Impedance SPICE Model withstanding high energy in the avalanche mode and the · Peak Current vs Pulse Width Curve diode exhibits very low reverse recovery time and stored · UIS Rating Curve charge. It was designed for use in applications where power efficiency is important, such as switching regulators, · Related Literature switching converters, motor drivers, relay drivers, low- - TB334, "Guidelines for Soldering Surface Mount voltage bus switches, and power management in portable Components to PC Boards" and battery-operated products. Symbol Formerly developmental type TA75307. D Ordering Information PART NUMBER PACKAGE BRAND G HUFA75307T3ST SOT-223 5307 NOTE: HUFA75307T3ST is available only in tape and reel. S Packaging SOT-223 DRAIN(FLANGE) GATE DRAIN SOURCE This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at: All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUFA75307T3ST Rev. B HUFA75307T3ST Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

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HUFA75307T3ST.pdf Datasheet