Part # FQD12N20L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD12N20L FQU12N20L 200V LOGIC N-Channel MOSF

Part Details:

FQD12N20 February 2001 L FQD12N20L / FQU12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 16 nC) planar stripe, DMOS technology. · Low Crss ( typical 17 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD12N20L / FQU12N20L Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C)

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FQD12N20L.pdf Datasheet