Part # FQD1N60C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD1N60C FQU1N60C 600V N-Channel MOSF


Part Details:

FQD1N60C / FQU1N60C QFET® FQD1N60C / FQU1N60C600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 1A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. · Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. D D ! G! D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD1N60C / FQU1N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 1 A - Continuous (TC = 100°C) 0.6 A IDM Drain Current


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FQD1N60C.pdf Datasheet