Part # FQB55N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB55N10 FQI55N10 100V N-Channel MOSF

Part Details:

10N August 2000 I55Q QFETTM F FQB55N10 / FQI55N10100V N-Channel MOSFET 55N10 /B General Description Features QF These N-Channel enhancement mode power field effect · 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 75 nC) planar stripe, DMOS technology. · Low Crss ( typical 130 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB55N10 / FQI55N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C)

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FQB55N10.pdf Datasheet