Part # 2N5952 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5952 N-Channel RF Ampifier


Part Details:

2N59 52 2N5952 N-Channel RF Ampifier· This device is designed primarily for electronic switching applications such as low on resistance analog switching. · Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off CharacteristicsV(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = -1.0µA -30 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 -1.0 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 100nA -1.3 -3.5


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2N5952.pdf Datasheet