Part # FDA16N50 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDA16N50_RevB.fm


Part Details:

FDA16N50 50 April 2007 UniFETTM FDA16N50 0V N-Channe 500V N-Channel MOSFET Features Description · 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 32 nC) transistors are produced using Fairchild s proprietary, planar · Low C stripe, DMOS technology. rss ( typical 20 pF) l MOSFET · Fas t switching This advanced technology has been especially tailored to · 100% avalanche tested minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche · Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3P G D S FDA Series S Absolute Maximum Ratings Symbol Parameter FDA16N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 16.5 A - Continuous (TC = 100°C) 9.9 A IDM Drain Current - Pulsed (Note 1) 66 A VGSS Gate-Source voltage ±30 V


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FDA16N50.pdf Datasheet