Part # FQD7P06 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD7P06 FQU7P06 60V P-Channel MOSF

Part Details:

FQD7P May 2001 QFETTM 06 / F FQD7P06 / FQU7P06 QU 60V P-Channel MOSFET 7P06 General Description Features These P-Channel enhancement mode power field effect · -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. · Low Crss ( typical 25 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand a high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices arewell suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products. S! D G ! ! D-PAK I-PAK G S FQD Series G D S FQU Series ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD7P06 / FQU7P06 Units VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -5.4 A - Continuous (TC = 100°C) -3.42

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FQD7P06.pdf Datasheet