Part # FQA140N10 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQA140N10 100V N-Channel MOSF

Part Details:

10N September 2000 QFETTM FQA140 FQA140N10100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 220 nC) planar stripe, DMOS technology. · Low Crss ( typical 470 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well · 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol. D ! " ! " G ! " ! " TO-3P ! G D S FQA Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA140N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 140 A - Continuous (TC = 100°C) 99 A IDM Drain Current - Pulsed

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FQA140N10.pdf Datasheet