Part # 2N5401 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5401 PNP Epitaxial Silicon Transistor


Part Details:

2N54 01 2N5401 Amplifier Transistor· Collector-Emitter Voltage: VCEO= 150V · Collector Dissipation: PC (max)=625mW · Suffix "-C" means Conter Collector (1. Emitter 2. Col ector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -160 V


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2N5401.pdf Datasheet