Part # FQB3N60C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB3N60C 600V N-Channel MOSF

Part Details:

FQ May 2006 B3N60C 600V N-Chan QFETTM FQB3N60C600V N-Channel MOSFET Features Description · 3A, 600V, RDS(on) = 3.4 @ VGS = 10 V These N-Channel enhancement mode power field effect · Low gate charge ( typical 10.5 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. nel MOSF · Low Crss ( typical 5 pF) This advanced technology has been especially tailored to · Fas t switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the avalanche · Improved dv/dt capability and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge ET topology. D D G D2-PAK G S FQB Series S Absolute Maximum Ratings Symbol Parameter FQB3N60C Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 3 A - Continuous (TC = 100°C) 1.8 A IDM Drain Current - Pulsed (Note 1) 12 A VGSS Gate-Source voltage

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FQB3N60C.pdf Datasheet