Part # FQD10N20L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD10N20L FQU10N20L 200V LOGIC N-Channel MOSF

Part Details:

FQD10N20 December 2000 QFETTM L FQD10N20L / FQU10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 13 nC) planar stripe, DMOS technology. · Low Crss ( typical 14 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD10N20L / FQU10N20L Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C)

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FQD10N20L.pdf Datasheet