Part # STY80NM60N datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-channel 600 V, 0.030 Ω, 74 A, MDmesh™ II Power MOSFET Max247


Part Details:

STY80NM60N N-channel 600 V, 0.030 , 74 A, MDmeshTM II Power MOSFET Max247 Features V Type DSS @ R T DS(on) max ID Jmax STY80NM60N 650 V < 0.035 74 A The worldwide best RDS(on) in Max247 3 100% avalanche tested 2 1 Low input capacitance and gate charge Max247 Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STY80NM60N 80NM60N Max247 Tube August 2008 Rev 3 1/12 www.st.com 12 Contents STY80NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1


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STY80NM60N.pdf Datasheet