Part # FDG6332C datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDG6332C 20V N & P-Channel PowerTrench® MOSFETs


Part Details:

FDG6332C September 2003 FDG6332C20V N & P-Channel PowerTrench® MOSFETs General Description Features The N & P-Channel MOSFETs are produced using · Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrenchprocess that has been especially tailored to minimize RDS(ON) = 400 m @ VGS = 2.5 V on-state resistance and yet maintain superiorswitching performance. · Q2 ­0.6 A, ­20V. RDS(ON) = 420 m @ VGS = ­4.5 V RDS(ON) = 630 m @ VGS = ­2.5 V These devices have been designed to offerexceptional power dissipation in a very small footprint · Low gate charge for applications where the bigger more expensiveTSSOP-8 and SSOP-6 packages are impractical. · High performance trench technology for extremely Applications low RDS(ON) · DC/DC converter · SC70-6 package: small footprint (51% smaller than · Load switch SSOT-6); low profile (1mm thick) · LCD display inverter S G 1 6 D 2 5 D G Pin 1 S 3 4 SC70-6 Complementary Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 20 ­20 V VGSS Gate-Source Voltage ±12 ±12


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FDG6332C.pdf Datasheet