Part # FDC655BN datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSF


Part Details:

FDC655BN Single N-Channel, April 2005 FDC655BNSingle N-Channel, Logic Level, PowerTrench® MOSFET Features General Description 6.3 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fair- RDS(ON) = 25 m @ VGS = 10 V child Semiconductor s advanced PowerTrench process that has RDS(ON) = 33 m @ VGS = 4.5 V been especially tailored to minimized on-state resistance and Fast switching yet maintain superior switching performance. Logic Le Low gate charge These devices are well suited for low voltage and battery pow- High performance trench technology for extremely low Rdson ered applications where low in-line power loss and fast switch-ing are required. vel, P S D o D 1 6 werT 55B 2 5 G renc D D SuperSOT-6TM 3 4 h ® MOSFET Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current ­ Continuous


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FDC655BN.pdf Datasheet