Part # 1N4454 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 1N4454 High Conductance Ultra Fast Diode

Part Details:

1N4454 Discrete POWER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units WIV Working Inverse Voltage 50 V IO Average Rectified Current 200 mA IF DC Forward Current 400 mA if Recurrent Peak Forward Current 600 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Tstg Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 200 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 1N4454 PD Total Device Dissipation 500

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1N4454.pdf Datasheet