Part # FDP2710 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDP2710 final datasheet_Rev.A.fm


Part Details:

FDP2710 250V N-Cha November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description nnel PowerT This N-Channel MOSFET is produced using Fairchild Semicon- · 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- · Fast switching speed cially tailored to minimize the on-state resistance and yet · Low gate charge maintain superior switching performance. · High performance trench technology for extremely low RDS(on) · High power and current handling capability· RoHS compliant Application rench MOSFET · PDP application D G TO-220 G D S S Absolute Maximum Ratings Symbol Parameter Ratings Unit VDS Drain-Source Voltage 250 V VGS Gate-Source voltage ± 30 V ID Drain Current - Continuous (TC = 25°C) 50 A - Continuous (TC = 100°C) 31.3 A IDM Drain Current - Pulsed (Note 1) See Figure 9 A EAS Single Pulsed Avalanche Energy (Note 2)


Please click the following link to download the datasheet:

FDP2710.pdf Datasheet