Part # RN1907 RN1909 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Part Details:

RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2907~RN2909 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN1907 10 47 RN1908 22 47 RN1909 47 22 JEDEC JEITA TOSHIBA 2-2J1A Weight: 6.8mg(typ.) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1907~1909 Collector-emitter voltage VCEO 50 V RN1907 6 Emitter-base voltage RN1908 7 VEBO V RN1909 15 Collector current IC 100 mA

Please click the following link to download the datasheet:

RN1907 RN1909.pdf Datasheet