Part # FQB4N80 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB4N80 FQI4N80 800V N-Channel MOSF


Part Details:

80 September 2000 I4N FQ QFETTM FQB4N80 / FQI4N80800V N-Channel MOSFET B4N80 /FQ General Description Features These N-Channel enhancement mode power field effect · 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 19 nC) planar stripe, DMOS technology. · Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " 3 5 G ! " ! " G S D2-PAK I2-PAK G D S ! FQB Series FQI Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB4N80 / FQI4N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 3.9 A - Continuous (TC = 100°C)


Please click the following link to download the datasheet:

FQB4N80.pdf Datasheet