Part # FDAF62N28 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDAF62N28 280V N-Channel MOSF


Part Details:

FDAF62N28 280V N-Ch October 2006 UniFETTM FDAF62N28280V N-Channel MOSFET Features Description · 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis- annel MOSFET · Low gate charge ( typical 77 nC) tors are produced using Fairchild s proprietary, planar stripe, · Low C DMOS technology. rss ( typical 83 pF) · Fas t switching This advanced technology has been especially tailored to mini- · 100% avalanche tested mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and · Improved dv/dt capability commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factorcorrection. D G TO-3PF G D S FDAF Series S Absolute Maximum Ratings Symbol Parameter FDAF62N28 Unit VDSS Drain-Source Voltage 280 V ID Drain Current - Continuous (TC = 25°C) 36 A - Continuous (TC = 100°C) 22 A IDM Drain Current - Pulsed (Note 1) 144 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy


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FDAF62N28.pdf Datasheet