Part # 2N5961 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5961 NPN General Purpose Amplifier

Part Details:

2N5961 Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA. Sourcedfrom Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Voltage 60 V VCBO Col ector-Base Voltage 60 V VEBO Emitter-Base Voltage 8.0 V IC Col ector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5961 PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C RJC Thermal Resistance, Junction to Case 83.3 °C/W RJA Thermal Resistance, Junction to Ambient

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2N5961.pdf Datasheet