Part # FDC699P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC699P P-Channel 2.5V PowerTrench MOSF


Part Details:

FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged · ­7 A, ­20 V RDS(ON) = 22 m @ VGS = ­4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 30 m @ VGS = ­2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate · High performance trench technology for extremely drive voltage (2.5V ­ 12V). low RDS(ON) Applications · Fast switching speed · Battery management · FLMP SuperSOT-6 package: Enhanced thermal · Load Switch performance in industry-standard package size · Battery protection G 1 6 S S 5 S 2 S 3 4 S Bottom Drain SuperSOT-6TM FLMP Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage


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FDC699P.pdf Datasheet