Part # 2SC4409 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)


Part Details:

2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications · Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) · High speed switching time: tstg = 500ns (typ.) · Small flat package · PC = 1~2 W (Mounted on a ceramic substrate) · Complementary to 2SA1681 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current I B 0.2 A Collector power dissipation P JEDEC C 500 mW Collector power dissipation PC (Note) 1000 mW JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55~150 °C Weight: 0.05 g (typ.) 2 Note: 2SC4409 mounted on a ceramic substrate (250 mm × 0.8 t) 1


Please click the following link to download the datasheet:

2SC4409.pdf Datasheet