Part # FDS6812A datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSF


Part Details:

FDS6812A November 2001 FDS6812ADual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 6.7 A, 20 V. RDS(ON) = 22 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 2.5 V PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain · Low gate charge (12 nC typical) superior switching performance. · High performance trench technology for extremely These devices are well suited for low voltage and low R battery powered applications where low in-line power DS(ON) loss and fast switching are required. · High power and current handling capability DD1 5 4 DD1 DD2 6 Q1 3 D D2 7 2 G1 SO-8 Q2 S1 G 8 1 G2 S S Pin 1 SO-8 S2 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12


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FDS6812A.pdf Datasheet