Part # IRFR210B datasheet

Part Manufacturer: Motorola


Part Description: RFR210B IRFU210B 200V N-Channel MOSF

Part Details:

IRF November 2001 R210B / I IRFR210B / IRFU210B RF 200V N-Channel MOSFET U21 General Description Features 0B These N-Channel enhancement mode power field effect · 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 7.2 nC) planar, DMOS technology. · Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control. D D ! G! D-PAK I-PAK G S IRFR Series G D S IRFU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFR210B / IRFU210B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 2.7

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IRFR210B.pdf Datasheet