Part # FDC638P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC638P P-Channel 2.5V PowerTrench Specified MOSF

Part Details:

FDC638P September 2001 FDC638P P-Channel 2.5V PowerTrench® Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced · ­4.5 A, ­20 V. R using Fairchild Semiconductor s advanced DS(ON) = 48 m @ VGS = ­4.5 V PowerTrench process that has been especially tailored RDS(ON) = 65 m @ VGS = ­2.5 V to minimize the on-state resistance and yet maintain low gate charge for superior switching performance · Low gate charge (10 nC typical) These devices are well suited for battery power · High performance trench technology for extremely applications: load switching and power management, low R battery charging circuits, and DC/DC conversion. DS(ON) · SuperSOT TM ­6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) S D 1 6 D 2 5 G SuperSOT -6TM D pin 1 D 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±8

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FDC638P.pdf Datasheet