Part # 2SA1962 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Triple Diffused Type


Part Details:

2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = -230 V (min) · Complementary to 2SC5242 · Recommended for 80-W high-fidelity audio frequency amplifier output stage. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base voltage VEBO -5 V Collector current IC -15 A Base current IB -1.5 A Collector power dissipation PC 130 W (Tc = 25°C) JEDEC Junction temperature Tj 150 °C JEITA Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-16C1A Electrical Characteristics Weight: 4.7 g (typ.) (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit


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2SA1962.pdf Datasheet