Part # 2SA1804 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon PNP Triple Diffused Type

Part Details:

2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = -140 V (min) · Complementary to 2SC4690 · Recommended for 70 W high fidelity audio frequency amplifier output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Collector-emitter voltage VCEO -140 V Base-emitter voltage VEBO -5 V DC IC -10 Collector current A Pulse ICP -20 Base current IB -1 A JEDEC Collector power dissipation PC 80 W JEITA (Tc = 25°C) Junction temperature T TOSHIBA 2-16F1A j 150 °C Storage temperature range Tstg Weight: 5.8 g (typ.) -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SA1804.pdf Datasheet