Part # FQNL2N50B datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQNL2N50B 500V N-Channel MOSF

Part Details:

FQNL2N50B March 2001 QFETTM FQNL2N50B500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 0.35A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. · Low Crss ( typical 4.0 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · Improved dv/dt capability performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply, powerfactor correction, electronic lamp ballast based on halfbridge. D ! " ! " G ! " ! " TO-92LFQNL Series ! G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQNL2N50B Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 0.35 A - Continuous (TC = 100°C) 0.22 A IDM Drain Current - Pulsed (Note 1) 1.4 A VGSS Gate-Source Voltage ± 30

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FQNL2N50B.pdf Datasheet