Part # FQD2N80 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD2N80 FQU2N80 800V N-Channel MOSF


Part Details:

0N8 September 2000 U2 FQ QFETTM /0 FQD2N80 / FQU2N80 N8 800V N-Channel MOSFET 2D General Description Features FQ These N-Channel enhancement mode power field effect · 1.8A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 12 nC) planar stripe, DMOS technology. · Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply. D D ! " 3 5 G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD2N80 / FQU2N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C)


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FQD2N80.pdf Datasheet