Part # FDS6679Z datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: Fds6679z


Part Details:

FDS6679Z October 2001 FDS6679Z 30 Volt P-Channel PowerTrench® MOSFET General Description Features This P-Channel MOSFET has been designed · ­13 A, ­30 V. R specifically to improve the overall efficiency of DC/DC DS(ON) = 9 m @ VGS = ­10 V converters using either synchronous or conventional RDS(ON) = 13 m @ VGS = ­ 4.5 V switching PWM controllers, and battery chargers. · Extended VGSS range (­25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · ESD protection diode (note 3) RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive · High performance trench technology for extremely (even at very high frequencies), and DC/DC power low RDS(ON) supply designs with higher overall efficiency. · High power and current handling capability D D D 5 4 D 6 3 G 7 2 S S 8 1 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­30


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FDS6679Z.pdf Datasheet