Part # STGB10NB37LZ datasheet

Part Manufacturer: ST Microelectronics

ST Microelectronics

Part Description: N-channel clamped 20A - D2PAK internally clamped PowerMESH™ IGB


Part Details:

STGB10NB37LZ N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMeshTM IGBT TYPE VCES VCE(sat) IC STGB10NB37LZ CLAMPED < 1.8 V 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE 3 s HIGH CURRENT CAPABILITY 1 s HIGH VOLTAGE CLAMPING FEATURE D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DIAGRAM designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS s AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Reverse Battery Protection 18 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuos) at TC = 100°C 20 A ICM


Please click the following link to download the datasheet:

STGB10NB37LZ.pdf Datasheet