Part # 2SA1244 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)


Part Details:

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm · Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -3 A) · High speed switching time: tstg = 1.0 µs (typ.) · Complementary to 2SC3074 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -5 A Base current IB -1 A Ta = 25°C 1.0 Collector power P W dissipation C Tc = 25°C 20 Junction temperature Tj 150 °C JEDEC Storage temperature range Tstg -55 to 150 °C JEITA TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC


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2SA1244.pdf Datasheet