Part # KSB1015 datasheet

Part Manufacturer: Motorola


Part Description: KSB1015 PNP Epitaxial Silicon Transistor

Part Details:

KSB101 5 KSB1015 Low Frequency Power Amplifier· Low Collector Emitter Saturation Voltage· Complement to KSD1406 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0

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KSB1015.pdf Datasheet