Part # 2N5306 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: 2N5306 NPN Darlington Transistor


Part Details:

2N53 06 2N5306 NPN Darlington Transistor· This device is designed for applications requiring extremely high current gain at currents to 1.0A. · Sourced from process 05.· See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Col ector-Emitter Voltage 25 V VCBO Col ector-Base Voltage 25 V VEBO Emitter-Base Voltage 12 V IC Col ector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off CharacteristicsV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1µA, IE = 0 25 V


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2N5306.pdf Datasheet