Part # 2SA966 datasheet

Part Manufacturer: Toshiba

Toshiba

Part Description: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


Part Details:

2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA966 Audio Power Amplifier Applications Unit: mm · Complementary to 2SC2236 and 3-W output applications. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Emitter current IE 1.5 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEDEC TO-92MOD JEITA TOSHIBA 2-5J1A Electrical Characteristics (Ta = 25°C) Weight: 0.36 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit


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2SA966.pdf Datasheet