Part # KSB596 datasheet

Part Manufacturer: Motorola


Part Description: KSB596 PNP Epitaxial Silicon Transistor

Part Details:

KSB596 KSB596 Power Amplifier Applications · Complement to KSD526 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Col ector-Base Voltage - 80 V VCEO Col ector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Col ector Current(DC) - 4 A IB Base Current - 0.4 A PC Col ector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Col ector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 80

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KSB596.pdf Datasheet