Part # 2SC4541 datasheet

Part Manufacturer: Toshiba


Part Description: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Part Details:

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit: mm Power Switching Applications · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) · High speed switching time: tstg = 0.5 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on a ceramic substrate) · Complementary to 2SA1736 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Base current I B 0.6 A Collector power dissipation P JEDEC C 500 mW PC JEITA SC-62 Collector power dissipation 1000 mW (Note) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 °C Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t) 1 2004-07-07

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2SC4541.pdf Datasheet