Part # FDC645N datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDS645N N-Channel PowerTrench MOSF


Part Details:

FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 5.5 A, 30 V. R specifically to improve the overall efficiency of DC/DC DS(ON) = 30 m @ VGS = 4.5 V converters using either synchronous or conventional RDS(ON) = 26 m @ VGS = 10 V switching PWM controllers. It has been optimized for low gate charge, low R · High performance trench technology for extremely DS(ON) and fast switching speed. low RDS(ON) Applications · Low gate charge (13 nC typical) · DC/DC converter · High power and current handling capability S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±12 V ID Drain Current ­ Continuous (Note 1a) 5.5 A


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FDC645N.pdf Datasheet