Part # 2SA1887 datasheet

Part Manufacturer: Toshiba


Part Description: Toshiba

Part Details:

2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications Unit: mm · High breakdown voltage: VCEO = -400 V · Low saturation voltage: VCE (sat) = -1 V (max) (IC = -100 mA, IB = -10 mA) · Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25 A Ta = 25°C 1.5 Collector power JEDEC P W dissipation C Tc = 25°C 10 JEITA Junction temperature

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2SA1887.pdf Datasheet