Part # FDC6506P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: sot23n.tstT65.T65


Part Details:

FDC6506P February 1999 FDC6506PDual P-Channel Logic Level PowerTrenchTM MOSFET General Description Features These P-Channel logic level MOSFETs are produced using · -1.8 A, -30 V. R = 0.170 @ V = -10 V DS(on) GS Fairchild Semiconductor s advanced PowerTrench R = 0.280 @ V = -4.5 V process that has been especially tailored to minimize DS(on) GS on-state resistance and yet maintain low gate charge forsuperior switching performance. · Low gate charge (2.3nC typical). These devices have been designed to offer exceptional · Fast switching speed. power dissipation in a very small footprint for applications · High performance trench technology for extremely where the bigger more expensive SO-8 and TSSOP-8 low R . packages are impractical. DS(ON) · SuperSOTTM-6 package: small footprint (72% smaller Applications than standard SO-8); low profile (1mm thick). · Load switch· Battery protection· Power management D2 S1 4 3 D1 5 2 G2 S2 TM 6 1 SuperSOT -6 G1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage -30 V


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FDC6506P.pdf Datasheet