Part # IRFS634B datasheet

Part Manufacturer: Motorola


Part Description: RF634B IRFS634B 250V N-Channel MOSF

Part Details:

IRF November 2001 634B/I RF IRF634B/IRFS634B S634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 29 nC) planar, DMOS technology. · Low Crss ( typical 20 pF) This advanced technology has been especially tailored to · Fast switching minimize on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies. D G TO-220 TO-220F G D S IRF Series G D S IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF634B IRFS634B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 8.1 8.1 * A - Continuous (TC = 100°C) 5.1 5.1 * A IDM Drain Current - Pulsed (Note 1)

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IRFS634B.pdf Datasheet