Part # FDN304P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDN304P P-Channel 1.8V Specified PowerTrench MOSF


Part Details:

FDN30 January 2001 4P FDN304PP-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses · ­2.4 A, ­20 V. R Fairchild s advanced low voltage PowerTrench process. DS(ON) = 52 m @ VGS = ­4.5 V It has been optimized for battery power management RDS(ON) = 70 m @ VGS = ­2.5 V applications. RDS(ON) = 100 m @ VGS = ­1.8 V Applications · Fast switching speed · Battery management · High performance trench technology for extremely · Load switch low RDS(ON) · Battery protection · SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint D D S G S TM G SuperSOT -3 Absolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings Units VDSS Drain-Source Voltage ­20 V VGSS Gate-Source Voltage ±8 V ID Drain Current ­ Continuous (Note 1a) ­2.4 A ­ Pulsed ­10 PD Maximum Power Dissipation (Note 1a)


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FDN304P.pdf Datasheet