Part # FQD7N10L datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQD7N10L FQU7N10L 100V LOGIC N-Channel MOSF


Part Details:

FQD7N10L / FQU7N10L December 2000 QFETTM FQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect · 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, · Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. · Low Crss ( typical 12 pF) This advanced technology is especially tailored to minimize · Fast switching on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation modes. These devices are · Low level gate drive requirments allowing well suited for low voltage applications such as high direct operation from logic drives efficiency switching DC/DC converters, and DC motorcontrol. D D ! " ! " G ! " ! " D-PAK I-PAK G S FQD Series G D S FQU Series ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQD7N10L / FQU7N10L Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 5.8 A


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FQD7N10L.pdf Datasheet