Part # FDC6036P datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC6036P P-Channel 1.8V Specified PowerTrench MOSF


Part Details:

FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses · ­5 A, ­20 V. R Fairchild s advanced low voltage PowerTrench process. DS(ON) = 44 m @ VGS = ­4.5 V Packaged in FLMP SSOT-6, the R RDS(ON) = 64 m @ VGS = ­2.5 V DS(ON) and thermal properties of the device are optimized for battery power RDS(ON) = 95 m @ VGS = ­1.8 V management applications. · Low gate charge, High Power and Current handling Applications capability · Battery management/Charger Application · · High performance trench technology for extremely Load switch low RDS(ON) · FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact 4 3 5 2 6 1 Bottom Drain Contact MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage ­20


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FDC6036P.pdf Datasheet