Part # FDC6392S datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode


Part Details:

FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild s PowerTrench MOSFET technology with a · ­2.2 A, ­20V. RDS(ON) = 150 m @ VGS = ­4.5V very low forward voltage drop Schottky barrier rectifier R in an SSOT-6 package. DS(ON) = 200 m @ VGS = ­2.5V · Low Gate Charge (3.7nC typ) This device is designed specifically as a single package solution for DC to DC converters. It features a fast · Compact industry standard SuperSOT-6 package switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky: Schottky diode allows its use in a variety of DC/DC · V converter topologies. F < 0.45 V @ 1 A D2 S1 D1 1 6 G2 2 5 TM S2 SuperSOT -6 G1 Pin 1 3 4 SuperSOTTM-6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS MOSFET Drain-Source Voltage ­20 V VGSS MOSFET Gate-Source Voltage ±12 V ID


Please click the following link to download the datasheet:

FDC6392S.pdf Datasheet