Part # HGTP2N120CN datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGB


Part Details:

HG March 2005 TP2 N120 HGTP2N120CN, HGT1S2N120CN CN, HG 13A, 1200V, NPT Series N-Channel IGBT T1 Features Description S · 13A, 1200V, T The HGTP2N120CN and HGT1S2N120CN are Non-Punch 2 C = 25°C N1 Through (NPT) IGBT designs. They are new members of the · 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine 20 · Typical Fall Time 360ns at TJ = 150°C the best features of MOSFETs and bipolar transistors. This CN 1 device has the high input impedance of a MOSFET and the low · Short Circuit Rating on-state conduction loss of a bipolar transistor. · Low Conduction Loss The IGBT is ideal for many high voltage switching applications 3A, 12 · Avalanche Rated operating at moderate frequencies where low conduction lossesare essential, such as: AC and DC motor controls, power sup- · Temperature Compensating SABERTM Model plies and drivers for solenoids, relays and contactors. Thermal Impedance SPICE Model 00 www.fairchildsemi.com Formerly Developmental Type TA49313 V, · Related Literature NP · TB334 "Guidelines for Soldering Surface Mount T S Components to PC Boards" eries Ordering Informations Part Number Package Brand N-Cha HGTP2N120CN TO-220AB 2N120CN HGT1S2N120CN TO-262 2N120CN


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HGTP2N120CN.pdf Datasheet