Part # FQB25N33 datasheet

Part Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor

Part Description: FQB25N33 330V N-Channel MOSF


Part Details:

FQB25N33 330V N-Ch September 2006 QFET ® FQB25N33330V N-Channel MOSFETFeatures General Description annel MOSFET · 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect · Low gate charge tr ansistors are prod uced usi ng Farichild s pr (typical 58nC) oprietary, · Low Crss (typical 40pF) planar stripe, DMOS technology. · Fas t switching This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching · 100% avalanche tested performance, and withstand high energy pulse in the · Improved dv/dt capability avalanche and commutation mode. These devices are well M I · Qualified to AEC Q101 A D F R E E P E L suited for high efficient switched mode power supplies, L EM · RoHS Compliant E active power factor correction, electronic lamp ballast NTA based on half bridge topology. TION Absolute Maximum Ratings Symbol Parameter FQB25N33 Units VDSS Drain-Source Voltage 330 V Drain Current - Continuous (T


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FQB25N33.pdf Datasheet